Voigt–Thomson law

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Voigt–Thomson law describes anisotropic magnetoresistance effect in a thin film strip as a relationship between the electric resistivity and the direction of electric current:[1]

ρ(ϑ)=ρ0+Δρcos2ϑ

where:

ϑ is the angle of direction of current in relation to the direction of magnetic field
ρ0 is the initial resistivity
Δρ is the change of resistivity (proportional to MR ratio)

The equation can also be expressed as:[2]

ρ(ϑ)=ρcos2ϑ+ρsin2ϑ

where:

ρ is the parallel component of resistivity
ρ is the perpendicular component

References

  1. Nie, H. B; Xu, S. Y; Li, J; Ong, C. K; Wang, J. P (2002). "Magnetic anisotropy and magnetoresistance of sputtered [(FeTaN)/(TaN)](n) multilayers". Journal of Applied Physics. 91 (10): 7532–7534. arXiv:cond-mat/0305687. Bibcode:2002JAP....91.7532N. doi:10.1063/1.1447875. S2CID 43762722.
  2. Royal Society (Great Britain) (1936). "Proceedings of the Royal Society of London: Mathematical and physical sciences. Series A". Proceedings of the Royal Society of London. Series A, Mathematical and Physical Sciences. Harrison and Son. ISSN 0962-8444. Retrieved 2015-07-19.